Electrical Characteristics
T A = 25°C unless otherwise noted
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
in pad of 2 oz.
on a .004 in pad of 2 oz
a) 130 ° C/W when
mounted on a 0.125
2
copper.
b) 140°C/W when mounted
2
copper
c) 180°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 μ s, Duty Cycle < 2.0%
FDC6392S Rev C(W)
相关PDF资料
FDC6401N MOSFET N-CH DUAL 20V SSOT-6
FDC640P_F095 MOSFET P-CH 20V 4.5A 6-SSOT
FDC6420C MOSFET N/P-CH 20V 3.0A SSOT-6
FDC642P MOSFET P-CH 20V 4A SSOT-6
FDC645N MOSFET N-CH 30V 5.5A SSOT-6
FDC6506P MOSFET P-CHAN DUAL 30V SSOT6
FDC653N MOSFET N-CH 30V 5A SSOT-6
FDC654P MOSFET P-CH 30V 3.6A SSOT-6
相关代理商/技术参数
FDC6392S_Q 功能描述:MOSFET 20V P-Ch PowerTrench Integrated RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC6401N 功能描述:MOSFET Dual N-Ch 2.5V Spec Power Trench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC6401N_NL 功能描述:MOSFET Dual N-Ch 2.5V PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC6401N_Q 功能描述:MOSFET Dual N-Ch 2.5V Spec Power Trench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC6401N-CUT TAPE 制造商:FAIRCHILD 功能描述:20V 70 mOhm Dual N-Ch 2.5V Specified PowerTrench Mosfet SSOT-6
FDC640P 功能描述:MOSFET SSOT-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC640P_01 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel 2.5V PowerTrench Specified MOSFET
FDC640P_F095 功能描述:MOSFET 2.5V P-CH POWERTRENCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube